| Ident. | Authors (with country if any) | Title |
|---|
| 000349 |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000713 |
| Quantum dot origin of luminescence in InGaN-GaN structures |
| 000716 |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000759 |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000778 |
| lime-resolved studies of InGaN/GaN quantum dots |
| 000895 |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000962 |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000979 |
| Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping |
| 000980 |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000985 |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000B00 |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C15 |
| Optical anisotropy in vertically coupled quantum dots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 |
| Gain characteristics of quantum-dot injection lasers |
| 000C61 |
| Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C83 |
| Surface-mode lasing from stacked InGaN insertions in a GaN matrix |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000E73 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 001032 |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001037 |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001044 |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001061 |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001062 |
| Modulation of a quantum well potential by a quantum-dot array |
